概要 |
日 時 : 平成16年11月12日 11:00-12:00
講演者 : Nikolai Sokolov 博士 所 属 : Ioffe Physico-Technical Institute of Russian Academy of Science, Russia
講演要旨 Recent research activities in the field of epitaxial fluoride nano- and heterostructures on silicon will be presented. The structures have been grown and studied in the group Epitaxial Insulators at Ioffe Physico-Technical Institute using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). X-ray diffraction and photoelectron spectroscopy studies have been carried out in close collaboration with a number of other research groups. The following topics will be discussed:
・ Initial stages of CaF2 growth on Si(001) and formation of the interface [1,2] ・ Specific features of SrF2 growth on Si(001) ・ Epitaxial stabilization of metastable phases in MnF2 films on Si ・ Growth and properties of fluoride superlattices (CdF2 - CaF2, MnF2 - CaF2) [3-5] ・ Formation of Co and Ni epitaxial nanoislands and films on fluoride surfaces ・ Unsolved problems and prospects for future studies
References
[1] N.S. Sokolov, S.M. Suturin, V.P. Ulin, L. Pasquali, G. Selvaggi and S. Nannarone, Appl. Surf. Sci, 234 (2004) 480-486. [2] L.Pasquali, S. D-Addato, G. Selvaggi, S. Nannarone, N.S.Sokolov, S.M.Suturin, H.Zogg, Nanotechnology 12 (2001) 403-408 [3] N.S.Sokolov, S.V.Gastev, A.Yu.Khilko, R.N.Kyutt, S.M.Suturin and M.V.Zamoryanskaya, J.Crystal Growth, 201/202 (1999) 1053-1056 [4] N.S.Sokolov, Y.Takeda, A.G.Banshchikov, J.Harada, K.Inaba, H.Ofuchi, M.Tabuchi, and N.L. Yakovlev, Appl. Surf. Sci., v.162-163 (2000) 469-473 [5] S. Kuroda, K. Marumoto, H. Kihara, H.Ofuchi, M.Tabuchi, Y.Takeda, A.G.Banshchikov, N.S.Sokolov, and N.L. Yakovlev, Jpn. J. Appl. Phys. Vol.40 (2001), Part 2, N 11A, L1151 - L1153
|